q?v~zy??q?v?_ra]~???qcabdq HFP10N65U bv dss = 650 v r ds(on) typ =0.8
i d =9.5 a ? originative new design ? superior avalanche rugged technology ? robust gate oxide technology ? very low intrinsic capacitances ? excellent switching characteristics ? unrivalled gate charge : 29 nc (typ.) ? extended safe operating area ? lower r ds(on) :0.8
7 \ s # 9 gs =10v ? 100% avalanche tested features absolute maximum ratings t c =25 e unless otherwise specified HFP10N65U 650v n-channel mosfet symbol parameter value units v dss drain-source voltage 650 v i d drain current ? continuous (t c = 25 e ) 9.5 a drain current ? continuous (t c = 100 e ) 6.0 a i dm drain current ? pulsed (note 1) 38 a v gs gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 470 mj i ar avalanche current (note 1) 9.5 a e ar repetitive avalanche energy (note 1) 16.4 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25 e ) - derate above 25 e 164 w 1.32 w/ e t j , t stg operating and storage temperature range -55 to +150 e t l maximum lead temperature for soldering purposes, 1/8? from case for 5 seconds 300 e 1.gate 2. drain 3. source 2 1 3 to-220 thermal resistance characteristics symbol parameter typ. max. units r jc junction-to-case -- 0.76 e /w r cs case-to-sink 0.5 -- r ja junction-to-ambient -- 62.5 march 2013
q?v~zy??q?v?_ra]~???qcabdq HFP10N65U notes ; 1. repetitive rating : pulse width limited by maximum junction temperature 2. l=9.6mh, i as =9.5a, v dd =50v, r g =25 : , starting t j =25 q c 3. i sd ? $ ,di/dt ? $ v , v dd ? % 9 dss , starting t j =25 q c 4. pulse test : pulse width ? v ' x w \ & \ f o h ? 5. essentially independent of operating temperature electrical characteristics t c =25 q c unless otherwise specified i s continuous source-drain diode forward current -- -- 9.5 a i sm pulsed source-drain diode forward current -- -- 38 v sd source-drain diode forward voltage i s = 9.5 a, v gs = 0 v -- -- 1.4 v trr reverse recovery time i s = 9.5 a, v gs = 0 v di f /dt = 100 a/ v (note 4) -- 340 -- qrr reverse recovery charge -- 3.3 -- & symbol parameter test conditions min typ max units v gs gate threshold voltage v ds = v gs , i d = 250 3 2.5 -- 4.5 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 4.75 a -- 0.80 0.98 ? on characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 3 650 -- -- v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 3 , referenced to 25 e -- 0.6 -- v/ e i dss zero gate voltage drain current v ds = 650 v, v gs = 0 v -- -- 1 3 v ds = 520 v, t c = 125 e -- -- 10 3 i gss gate-body leakage current v gs = 30 v, v ds = 0 v -- -- 100 2 off characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 1600 2100 ? c oss output capacitance -- 140 180 ? c rss reverse transfer capacitance -- 11 14.5 ? dynamic characteristics t d(on) turn-on time v ds = 325 v, i d = 9.5 a, r g = 25 ? (note 4,5) -- 50 100 t r turn-on rise time -- 70 140 t d(off) turn-off delay time -- 160 320 t f turn-off fall time -- 60 120 q g total gate charge v ds = 520v, i d = 9.5 a, v gs = 10 v (note 4,5) -- 29 38 nc q gs gate-source charge -- 8.5 -- nc q gd gate-drain charge -- 9-- nc switching characteristics source-drain diode maximum ratings and characteristics package marking and odering information device marking week marking package packing quantity rohs status HFP10N65U ywwx to-220 tube 50 pb free HFP10N65U ywwxg to-220 tube 50 halogen free
q?v~zy??q?v?_ra]~???qcabdq HFP10N65U typical characteristics figure 1. on region characteristics figure 2. transfer characteristics figure 3. on resistance variation vs drain current and gate voltage figure 4. body diode forward voltage variation with source current and temperature figure 5. capacitance characteristics figur e 6. gate charge characteristics 0 5 10 15 20 25 30 0 2 4 6 8 10 12 v ds = 325v v ds = 130v v ds = 520v
note : i d = 9.5a v gs , gate-source voltage [v] q g , total gate charge [nc] 10 1 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v bottom : 5.5 v * notes : 1. 300us pulse test 2. t c = 25 o c i d , drain current [a] v ds , drain-source voltage [v] 0 3 6 9 12 15 18 21 0.6 0.8 1.0 1.2 1.4 v gs = 20v v gs = 10v
note : t j = 25 o c r ds(on) [ : ], drain-source on-resistance i d , drain current [a] 10 -1 10 0 10 1 0 400 800 1200 1600 2000 2400 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd * note ; 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitances [pf] v ds , drain-source voltage [v] 246810 0.1 10 -55 o c 25 o c * notes : 1. v ds = 30v 2. 300us pulse test v gs , gate-source voltage [v] i d , drain current [a] 150 o c 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 25 o c * notes : 1. v gs = 0v 2. 300us pulse test v sd , source-drain voltage [v] i dr , reverse drain current [a] 150 o c
q?v~zy??q?v?_ra]~???qcabdq HFP10N65U typical characteristics figure 7. breakdown voltage variation vs temperature figure 8. on-resistance variation vs temperature figure 9. maximum safe operating area figure 10. maximum drain current vs case temperature figure 11. transient thermal response curve -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2
note : 1. v gs = 0 v 2. i d = 250 p a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] t 2 t 1 p dm 25 50 75 100 125 150 0 2 4 6 8 10 i d , drain current [a] t c , case temperature [ o c] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 * notes : 1. z t jc (t) = 0.76 o c/w max. 2. duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z t jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z t jc (t), thermal response t 1 , square wave pulse duration [sec] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 10 p s 100 ms dc 10 ms 1 ms 100 p s operation in this area is limited by r ds(on) * notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0
note : 1. v gs = 10 v 2. i d = 4.75 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c]
q?v~zy??q?v?_ra]~???qcabdq HFP10N65U fig 12. gate charge test circuit & waveform fig 13. resistive switching test circuit & waveforms fig 14. unclamped inductive switching test circuit & waveforms e as =l l i as 2 ---- 2 1 -------------------- bv dss -- v dd bv dss v in v ds 10% 90% t d(on) t r t on t off t d(off) t f charge v gs 10v q g q gs q gd v dd v ds bv dss t p v dd i as v ds (t) i d (t) time v dd ( 0.5 rated v ds ) 10v v ds r l dut r g 3ma v gs dut v ds 300nf .
200nf 12v same type as dut 10v dut r g l i d
q?v~zy??q?v?_ra]~???qcabdq HFP10N65U fig 15. peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i s controlled by pulse period v dd l i s 10v v gs ( driver ) i s ( dut ) v ds ( dut ) v dd body diode forward voltage drop v f i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period --------------------------
q?v~zy??q?v?_ra]~???qcabdq HFP10N65U package dimension 9.19 0.20 3 0.20 9.90 0.20 2.80 0.20 15.70 0.20 13.08 0.20 3.02 0.20 2.54typ 6.50 0.20 0.80 0.20 1.27 0.20 1.52 0.20 1.30 0.20 4.50 0.20 0.50 0.20 2.40 0.20 2.54typ { v t y y w g o h p g
q?v~zy??q?v?_ra]~???qcabdq HFP10N65U 0.20 2.74 0.20 15.44 0.20 13.28 0.20 2.67 0.20 6.30 0.20 0.81 0.20 1.27 0.20 1.27 0.20 4.57 0.20 0.40 0.20 2.67 0.20 9.14 0.20 3 0.20 2.54typ 2.54typ { v t y y w g o i p g package dimension
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